Hostname: page-component-76fb5796d-zzh7m Total loading time: 0 Render date: 2024-04-27T02:24:54.798Z Has data issue: false hasContentIssue false
  • English
  • Français

The Impact of Dielectric Films and Post-Metal Etch Wet Treatment on Charge-Induced Corrosion of Tungsten Vias

Published online by Cambridge University Press:  01 February 2011

Szetsen Lee  and
Chi-Jung Ni
Szetsen Lee
Affiliation:
slee@cycu.edu.tw, Chung Yuan Christian University, Chemistry, 200 Jongbei Road, Chugli, 32023, Taiwan, 886-3-2653308, 886-3-2653399
Chi-Jung Ni
Affiliation:
CJNi@winbond.com, Winbond Electronics Corporation, Module Technology Development, 9 Li Hsin Road, Hsinchu, 30078, Taiwan
Get access

Abstract

The prevention of charge-induced corrosion of tungsten vias after metal etch has been stud-ied with several types of commonly used wet chemical solutions and two kinds of dielectric film materials, silicon dioxide and silicon oxynitride. It was found that one of the solutions, leaving essentially no polymer residue on metal lines, could effectively prevent corrosion of tungsten vias. Other solutions either produced minor residues or severe sidewall erosion on metal lines. This study has shown that the combination of wet treatment with oxynitride as the dielectric charge shielding film was as effective as other conventional methods for preventing tungsten vias corrosion. However, for metal lines capped with silicon dioxide, significant sidewall ero-sion, surface roughness, and polymer residue were observed. Chemical reaction mechanisms are proposed for the preservation of tungsten vias after metal etch.

Keywords

corrosionWchemical reaction
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 990: Symposium B – Materials, Processes, Integration and Reliability in Advanced Interconnects for Micro- and Nanoelectronics , 2007 , 0990-B03-17
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Ammar, I. A., Darwish, S., and Khalil, M. W., Zeitschrift für Werkstofftechnik 13, 163 (1982).Google Scholar
2 Kelsey, G. S., J. Electrochem. Soc, 124, 814 (1977).Google Scholar
3 El-Basiouny, M. S. and Hefny, M. M., British Corrosion J. 16, 50 (1981).Google Scholar
4 Zhang, H., Chen, B. H., Ye, J. H., Chooi, S. Y. M., Cha, R., and Chan, L., Proceedings - Electrochemical Society (2002), 2001-26 (Cleaning Technology in Semiconductor Device Manufacturing), 295 (2001).Google Scholar
5 Kim, J. I., Shin, K. S., Baek, K. H., Lee, D. J., Kim, K. H., Hwang, C. H., and Lee, D. H., Jpn. J. Appl. Phys. 41, 566 (2002).Google Scholar
6 Bothra, S., Sur, H., and Liang, V., 36th annual International Reliability Physics Symposium Proceedings, 3A.4, 150 (1998).Google Scholar
7 Bothra, S., Sur, H., Liang, V., Annapragada, R., and Patel, J., 3rd International Symposium on Plasma Process-Induced Damage, Honolulu, June 4-5, 1998, p. 227 (1998).Google Scholar
8 Fang, S. and McVittie, J. P., J. Appl. Phys. 72, 4865 (1992).Google Scholar
9 Lee, J.-E., Chung, J.-H., Park, H., Seo, T. W., Park, S.-H., Chung, U.-I., Kang, G.-W., and Lee, M.-Y., International Interconnect Technology Conference Proceedings, 273 (1999).Google Scholar
10 Yamazaki, S., “Semiconductor Device”, US Patent 5990542 (1999).Google Scholar
11 Tzeng, P.-J., Wu, B.-F., and Chang-Liao, K.-S., Jpn. J. Appl. Phys. 40, L536 (2001).Google Scholar