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The Hysteresis Analysis of Hydrogenated Amorphous Silicon Thin Film Transistors for an Active Matrix Organic Light Emitting Diode

  • Jae-Hoon Lee (a1), Bong-Hyun You (a1), Kwang-Sub Shin (a1) and Min-Koo Han (a1)

Abstract

An experimental scheme for validating the cause of the hysteresis phenomenon in hydrogenated amorphous silicon thin film transistor (a-Si:H TFT) is reported. The different gate starting voltage to the desired gate voltage has been considered to prove an effect of filling an acceptor-like or donor-like state in the interface. The integration time of the semiconductor parameter analyzer (HP4156B) has also been controlled to investigate the effect between the detrapping rate and hysteresis. The experimental results show that the previous data voltage in the (n-1)th frame affects the OLED current in the (n)th frame.

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[1] Stewart, M., “Polysilicon TFT Technology for Active Matrix OLED Displays.” IEEE Trans. on Electron Devices, Vol. 48, No. 5, pp. 845851, 2001.10.1109/16.918227
[2] Nathan, A., “Amorphous Silicon Thin Film Transistor Circuit Integration for Organic LED Displays on Glass and Plastic”, IEEE Journal of solid-state circuits, vol.39, pp.14771486, 2004.10.1109/JSSC.2004.829373
[3] Kuo, Yue, Thin film transistors Materials and Processes, Kluwer academic publishers (2004), p.83.10.1007/978-1-4615-0397-2
[4] Neamen, D.A., Semiconductor physics and devices, McGraw-Hill (2003), p.492.

The Hysteresis Analysis of Hydrogenated Amorphous Silicon Thin Film Transistors for an Active Matrix Organic Light Emitting Diode

  • Jae-Hoon Lee (a1), Bong-Hyun You (a1), Kwang-Sub Shin (a1) and Min-Koo Han (a1)

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