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Hydrogen Incorporation in Amorphous Silicon Prepared at High Deposition Rates by the VHF-GD Technique

Published online by Cambridge University Press:  25 February 2011

F. Finger ,
V. Viret ,
A. Shah ,
X.-M. Tang ,
J. Weber  and
W. Beyer
F. Finger
Affiliation:
Institut de Microtechnique, Université de Neuchâtel, CH-2000 Neuchâtel, Switzerland
V. Viret
Affiliation:
Institut de Microtechnique, Université de Neuchâtel, CH-2000 Neuchâtel, Switzerland
A. Shah
Affiliation:
Institut de Microtechnique, Université de Neuchâtel, CH-2000 Neuchâtel, Switzerland
X.-M. Tang
Affiliation:
Institut de Physique, Université de Neuchâtel, CH-2000 Neuchâtel, Switzerland
J. Weber
Affiliation:
Institut de Physique, Université de Neuchâtel, CH-2000 Neuchâtel, Switzerland
W. Beyer
Affiliation:
Kernforschungsanlage Jülich GmbH, D-5170 Jülich, West-Germany.
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Abstract

The influence of deposition temperature on hydrogen incorporation in a-Si:H prepared by VHF glow discharge at 70 MHz is investigated using hydrogen evolution, elastic recoil detection analysis and infrared spectroscopy.The films were further characterized by dark- and photoconductivity and by photothermal deflection spectroscopy. While the electronic film properties deteriorate in the usual manner with decreasing substrate temperature it is found that the total hydrogen content CH and the degree of microstructure that can be directly correlated to CH increase only moderately. It is concluded that a higher flux of low energy ions in the VHF plasma plays a key role in this context, possibly by increasing the surface mobility of the H atoms and thereby preventing the build-in of a large amount of hydrogen at low substrate temperatures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 192: Symposium O – Amorphous Silicon Technology - 1990 , 1990 , 583
Copyright
Copyright © Materials Research Society 1990

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References

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