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The Hot Carrier Degradation and Device Characteristics with Variation of Pre-Metal Dielectric Materials

Published online by Cambridge University Press:  10 February 2011

Y. J. Seo ,
W. S. Choi ,
S. Y. Kim ,
C. I. Kim ,
E. G. Chang  and
W. S. Lee
Y. J. Seo
Affiliation:
School of Electrical & Electronic Engineering, Daebul University, Chonnam, 526-890, Korea, syj@daebul.daebul.ac.kr
W. S. Choi
Affiliation:
School of Electrical & Electronic Engineering, Daebul University, Chonnam, 526-890, Korea, syj@daebul.daebul.ac.kr
S. Y. Kim
Affiliation:
Department of Electrical Engineering, Chungang Univ., Seoul, 156-756, Korea
C. I. Kim
Affiliation:
Department of Electrical Engineering, Chungang Univ., Seoul, 156-756, Korea
E. G. Chang
Affiliation:
Department of Electrical Engineering, Chungang Univ., Seoul, 156-756, Korea
W. S. Lee
Affiliation:
Department of Electrical Engineering, Chosun Univ., Kwangju, 501-759, Korea
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Abstract

It is very important to select superior interlayer Pre Metal Dielectric (PMD) materials which can act as a penetration barrier to various impurities created by the Chemical Mechanical Polishing (CMP) processes. In this paper, hot carrier degradation and device characteristics were investigated with material variation of PMD-1 layers, which were split by LP-TEOS, SR-oxide, PE-oxynitride, PE-nitride and PE-TEOS films. It was observed that the PE-oxynitride and PEnitride using plasma was greatly deteriorated in hot carrier effect in comparison with silicon oxide. Consequently, it is clearly shown that silicon oxide turned out to be a better PMD-1 material than both PE-oxynitride and PE-nitride. From the results, it is suggested that LP-TEOS film is the best PMD-1 material among the silicon oxide samples.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 544: Symposium Y – Plasma Deposition and Treatment of Polymers , 1998 , 179
Copyright
Copyright © Materials Research Society 1999

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