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High-speed Processing with Cluster Ion Beams

Published online by Cambridge University Press:  01 February 2011

Toshio Seki  and
Jiro Matsuo
Toshio Seki
Affiliation:
Quantum Science and Engineering Center, Kyoto Univ., Yoshida-honmachi Sakyo-ku, Kyoto 606–8501, Japan Collaborative Research Center for Advanced Quantum Beam Process Technology, Japan Collaborative Research Center for Cluster Ion Beam Process Technology, Japan
Jiro Matsuo
Affiliation:
Quantum Science and Engineering Center, Kyoto Univ., Yoshida-honmachi Sakyo-ku, Kyoto 606–8501, Japan
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Abstract

Cluster ion beam processes can produce high rate sputtering with low damage in comparison with monomer ion beam processes. Especially, it is expected that extreme high rate sputtering can be obtained using reactive cluster ion beams. High current SF6 cluster ion beams were recently obtained with new modifications in the basic cluster ion beam technique. The cluster size distribution was measured with Time-of-Flight (TOF) method and the mean size of cluster was about 500 molecules. Si substrates were irradiated with SF6 cluster ions at the acceleration energy of 5–45 keV. Sputtering yield with SF6 cluster ions was increased with acceleration energy and was about 2300 atoms/ion at 45 keV. The sputtering yield was about 1000 times higher than that of Ar monomer ions and was also higher than that of Ar cluster ions. It was found that reactive sputtering occurred with SF6 cluster ion irradiation. These results indicate that high-speed fabrication can be realized with reactive cluster ion irradiation at high energy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 792: Symposium R – Radiation Effects and Ion Beam Processing of Materials , 2003 , R9.29
Copyright
Copyright © Materials Research Society 2004

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References

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