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Heteroepitaxial Growth of Si ON ZrO2-Y2O3/Si

Published online by Cambridge University Press:  25 February 2011

M. Yamamoto ,
H. Fukumoto  and
Y. Osaka
M. Yamamoto
Affiliation:
Faculty of Engineering, Hiroshima University, Higashihiroshima 724, Japan
H. Fukumoto
Affiliation:
Faculty of Engineering, Hiroshima University, Higashihiroshima 724, Japan
Y. Osaka
Affiliation:
Faculty of Engineering, Hiroshima University, Higashihiroshima 724, Japan
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Abstract

Silicon films were grown on epitaxial (ZrO2)1-x(Y2O3). films on the Si substrate. The deposition of Si was carried out by conventional plasma-CVD of the mixture of SiH4, H2 and PH3 gases. The appropriate deposition conditions for the epitaxial growth of Si were examined. The crystallographic properties of the Si films were characterized by reflection high-energy electron diffraction (RHEED).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 221: Symposium C – Heteroepitaxy of Dissimilar Materials , 1991 , 35
Copyright
Copyright © Materials Research Society 1991

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References

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