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Heteroepitaxial CxSil−X/Si(100) Metastable Alloys

Published online by Cambridge University Press:  28 February 2011

J.B. Posthill ,
R.A. Rudder ,
S.V. Hattangady ,
G.G. Fountain ,
T.P. Humphreys ,
R.J. Nemanich ,
N.R. Parikh  and
R.J. Markunas
J.B. Posthill
Affiliation:
Research Triangle Institute, Research Triangle Park, North Carolina 27709-2194
R.A. Rudder
Affiliation:
Research Triangle Institute, Research Triangle Park, North Carolina 27709-2194
S.V. Hattangady
Affiliation:
Research Triangle Institute, Research Triangle Park, North Carolina 27709-2194
G.G. Fountain
Affiliation:
Research Triangle Institute, Research Triangle Park, North Carolina 27709-2194
T.P. Humphreys
Affiliation:
Department of Physics, North Carolina State University, Raleigh, North Carolina, 27695-8202
R.J. Nemanich
Affiliation:
Department of Physics, North Carolina State University, Raleigh, North Carolina, 27695-8202
N.R. Parikh
Affiliation:
Department of Physics and Astronomy, University of North Carolina, Chapel Hill, North Carolina 27599-3255
R.J. Markunas
Affiliation:
Research Triangle Institute, Research Triangle Park, North Carolina 27709-2194
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Abstract

Metastable CxSi1− epitaxial films have been grown on Si(100) by remote plasmaenhanced chemical vapor deposition. Carbon concentrations of ∼ 3 atomic percent have been achieved at a growth temperature of 725 °C. No evidence for the formation or precipitation of SiC was found using x-ray diffraction, Raman scattering spectroscopy, IR. reflectance, or transmission electron microscopy. IR reflectance data gives a preliminary indication that the carbon has been incorporated onto substitutional sites in the Si lattice.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 198: Symposium V – Epitaxial Heterostructures , 1990 , 497
Copyright
Copyright © Materials Research Society 1990

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References

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