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Growth of Single Crystal Si/NiSi2/Si(100) and Si/CoSi2/Si(100) Structures by Molecular Beam Epitaxy and Furnace Annealing

Published online by Cambridge University Press:  25 February 2011

R. T. Tung ,
D. J. Eaglesham ,
F. Schrey  and
J. P. Sullivan
R. T. Tung
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
D. J. Eaglesham
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
F. Schrey
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
J. P. Sullivan
Affiliation:
Univ. of Pennsylvania, Dept. of Materials Science, Philadelphia, PA 19104
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Abstract

Uniform, single crystal Si/NiSi2/Si(100) and Si/CoSi2/Si(100) structures were fabricated by molecular beam epitaxy and furnace annealing. A Si template technique and a post-growth anneal at ∼960°C led to high quality buried NiSi2 layers with thickness ∼1000Å. The conditions for fabricating high quality buried CoSi2 layers by the recently proposed allotaxy process were studied and discussed. The endotaxial growth of buried CoSi2 layers in Si(100) was also studied.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 281: Symposium D – Semiconductor Heterostructures for Photonic and Electronic Applications , 1992 , 641
Copyright
Copyright © Materials Research Society 1993

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References

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