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Growth of Epitaxical SiC Layers onto on and off Axis 6H SiC Substrates by Ion Beam Deposition

  • K. L. More (a1), S. P. Withrow (a1), T. E. Haynes (a1) and R. A. Zuhr (a1)

Abstract

Thin films of β SiC have been grown epitaxically onto on axis (0001) 6H α SiC substrates using ion beam deposition. The ion beam deposition technique involves the direct deposition of alternating layers of 13C+ and 30Si+. The carbon and silicon ions were obtained from an ion implanter by decelerating mass analyzed ion beams to 40 eV. The SiC substrate was held at ∼973 K. Thin films of α-SiC (a mixture of α- polytypes) were obtained following deposition onto off axis (∼2°) 6H α-SiC. High resolution electron microscopy and Rutherford backscattering techniques were used to determine the structure and crystalline perfection of the resulting layers.

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Growth of Epitaxical SiC Layers onto on and off Axis 6H SiC Substrates by Ion Beam Deposition

  • K. L. More (a1), S. P. Withrow (a1), T. E. Haynes (a1) and R. A. Zuhr (a1)

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