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Growth of Epitaxical SiC Layers onto on and off Axis 6H SiC Substrates by Ion Beam Deposition

Published online by Cambridge University Press:  26 February 2011

K. L. More ,
S. P. Withrow ,
T. E. Haynes  and
R. A. Zuhr
K. L. More
Affiliation:
P.O. Box 2008, Oak Ridge National Laboratory, Oak Ridge, TN 37831 6064
S. P. Withrow
Affiliation:
P.O. Box 2008, Oak Ridge National Laboratory, Oak Ridge, TN 37831 6064
T. E. Haynes
Affiliation:
P.O. Box 2008, Oak Ridge National Laboratory, Oak Ridge, TN 37831 6064
R. A. Zuhr
Affiliation:
P.O. Box 2008, Oak Ridge National Laboratory, Oak Ridge, TN 37831 6064
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Abstract

Thin films of β SiC have been grown epitaxically onto on axis (0001) 6H α SiC substrates using ion beam deposition. The ion beam deposition technique involves the direct deposition of alternating layers of 13C+ and 30Si+. The carbon and silicon ions were obtained from an ion implanter by decelerating mass analyzed ion beams to 40 eV. The SiC substrate was held at ∼973 K. Thin films of α-SiC (a mixture of α- polytypes) were obtained following deposition onto off axis (∼2°) 6H α-SiC. High resolution electron microscopy and Rutherford backscattering techniques were used to determine the structure and crystalline perfection of the resulting layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 162: Symposium F – Diamond, Silicon Carbide and Related Wide Bandgap Semiconductors , 1989 , 451
Copyright
Copyright © Materials Research Society 1990

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References

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