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Growth Kinetics of Grain-Boundary Induced Melting: A Molecular-Dynamics Study
Published online by Cambridge University Press: 28 February 2011
Abstract
The growth kinetics of melting nucleated at a high-angle twist boundary in silicon are investigated using molecular dynamics. Melting is found to be a two-stage process. In the first stage order is lost within a single plane at the interface and the density of the solid increases to that of the liquid. In the second stage the atomic coordination changes and an isotropic liquid is formed.
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- Copyright © Materials Research Society 1989
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