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Gettering & Precipitation Phenomena in Semiconductors

Published online by Cambridge University Press:  21 February 2011

D. K. Sadana
D. K. Sadana*
Affiliation:
Philips Research Laboratories Sunnyvale Signetics Corporation 811 E. Arques Ave. Sunnyvale, CA 94086
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Abstract

Impurity gettering at defects/damage in Si is discussed. Details of intrinsic and extrinsic gettering in Si are presented. The utility of gettering is demonstrated by comparing the results from gettered and non-gettered test devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 36: Symposium C – Impurity Diffusion and Gettering in Silicon , 1984 , 245
Copyright
Copyright © Materials Research Society 1985

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References

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