Article contents
Gettering & Precipitation Phenomena in Semiconductors
Published online by Cambridge University Press: 21 February 2011
Abstract
Impurity gettering at defects/damage in Si is discussed. Details of intrinsic and extrinsic gettering in Si are presented. The utility of gettering is demonstrated by comparing the results from gettered and non-gettered test devices.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 1985
References
REFERENCES
- 4
- Cited by