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Formation of Device Quality Si/SiO2 Interfaces in a Multichamber Integrated Processing System

Published online by Cambridge University Press:  25 February 2011

S.S. Kim ,
D.V. Tsu ,
G. Lucovsky ,
G.G. Fountain  and
R.J. Markunas
S.S. Kim
Affiliation:
North Carolina State University, Dept. of Physics, Raleigh, NC 27695
D.V. Tsu
Affiliation:
North Carolina State University, Dept. of Physics, Raleigh, NC 27695
G. Lucovsky
Affiliation:
North Carolina State University, Dept. of Physics, Raleigh, NC 27695
G.G. Fountain
Affiliation:
Research Triangle Institute, Research Triangle Park, NC 27709
R.J. Markunas
Affiliation:
Research Triangle Institute, Research Triangle Park, NC 27709
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Abstract

This paper describes the key process steps in the low temperature, <300ºC, formation of device quality Si/SiO2 interfaces employing oxide deposition by Remote Plasma-Enhanced Chemical Vapor-Deposition (Remote PECVD). The quality of the Si/SiO2 interface correlates with the degree of surface reconstruction that is controlled by ex-situ wet cleaning and in-situ Rapid Flash Heating. Electronic properties of the MOS structure also vary with the deposited oxide thickness, independent of the initial surface quality.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 146: Symposium B – Rapid Thermal Annealing/Chemical Vapor Deposition and Integrated Processing , 1989 , 327
Copyright
Copyright © Materials Research Society 1989

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References

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