Hostname: page-component-78c5997874-g7gxr Total loading time: 0 Render date: 2024-11-18T21:48:43.029Z Has data issue: false hasContentIssue false
  • English
  • Français

Film Stress in Pd2Si Layers of Varying Thickness

Published online by Cambridge University Press:  22 February 2011

Betty Coulman ,
Haydn Chen  and
Kenneth Ritz
Betty Coulman
Affiliation:
Dept. of Metallurgy and Mining Engineering and the Materials Research Laboratory, University of Illinois at Urbana-Champgaign, IL 61801.
Haydn Chen
Affiliation:
Dept. of Metallurgy and Mining Engineering and the Materials Research Laboratory, University of Illinois at Urbana-Champgaign, IL 61801.
Kenneth Ritz
Affiliation:
Philips Research Laboratory Sunnyvale, Signetics Corp., Sunnyvale, CA 94088
Get access

Abstract

Little is known about the development of film stresses in very thin films (thicknesses of the order of a few hundred Angstroms or less). As interest intensifies in the technological application of ever smaller quantities of materials, the behavior of very thin. films will undergo increasing scrutiny. In this study, the film stresses in evaporated Pd films and Pd2Si films formed by reaction with the Si substrates at 250°C were measured for thicknesses ranging from 7 to 107 nm. Stresses were calculated from the substrate radii of curvature determined by X-ray diffraction topography techniques (Lang and double crystal) and Stoney's equation. Because film continuity cannot be taken for granted at low coverage, the films were examined by electron microscopy in an attempt to correlate their morphology with the observed stresses.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 47: Symposium C – Thin Films: The Relationship of Structure to Properties , 1985 , 155
Copyright
Copyright © Materials Research Society 1985

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Hoffman, R. W., in Physics of Thin Films, edited by Georg, Hass and Rudolf E., Thun (Academic Press, New York, 1966), Vol.3, pp. 211–273.Google Scholar
2. Hoffman, R. W., Thin Solid Films 34, 185 (1976).CrossRefGoogle Scholar
3. Ohfuji, S. and Nagano, J., J. Vac. Sci. Technol. B2, 135 (1984).CrossRefGoogle Scholar
4. Thornton, J. and Hoffman, D., in Proceedings 22nd Annual Technical Conference of the Society of Vacuum Coaters, New Orleans, LA (1979) pp. 5–18. Google Scholar
5. Wilcock, J. D., Campbell, O. S. and Anderson, J. C., Thin Solid Films 3, 13 (1969).CrossRefGoogle Scholar
6. Tromp, R., van Loenen, E. J., Iwami, M., Smeenk, R. and Saris, F. W., in Thin Films and Interfaces - MRS Symposia Proceedings, edited by Ho, P. S. and Tu, K. N. (Elsevier, New York, 1982), Vol 10, pp. 155–163.Google Scholar
7. Buckley, W. D. and Moss, S. C., Solid-State Electron. 15, 1331 (1972).CrossRefGoogle Scholar
8. Samples were prepared in the Central Scientific Laboratories of IBM, Yorktown, under the direction of P. S. Ho.Google Scholar
9. Coulman, Betty Ann, Ph. D. thesis, University of Illinois at Urbana – Champaign, 1985.Google Scholar
10. Wensink, B., Solid State Technol., Oct.. 1979, p. 109.Google Scholar
11. Stoney, G. G., Proc. R. Soc. London, Ser. A: 82, 172 (1909).Google Scholar
12. Klokholm, E. and Berry, B. S., J. Electrochem. Soc. 115, 823 (1968).CrossRefGoogle Scholar
13. Angilello, J., Baglin, J., d'Heurle, F., Petersson, S. and Segmuller, A., in Thin Film Interfaces and Interactions, edited by J., Baglin and J., Poate (The Electrochemical Society, Princeton, 1980), pp. 369–384.Google Scholar