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Facet Formation of Lineshaped Silicon Mesas Grown with Micro Shadow Masks

Published online by Cambridge University Press:  15 February 2011

H. Gossner ,
G. Fehlauer ,
W. Kiunke ,
I. Eisele ,
M. Stolz ,
M. Hintermaier  and
E. Knapek
H. Gossner
Affiliation:
Institute of Physics, Faculty of Electric Engineering, Universität der Bundeswehr München, D-85577 Neubiberg, FRG
G. Fehlauer
Affiliation:
Institute of Physics, Faculty of Electric Engineering, Universität der Bundeswehr München, D-85577 Neubiberg, FRG
W. Kiunke
Affiliation:
Institute of Physics, Faculty of Electric Engineering, Universität der Bundeswehr München, D-85577 Neubiberg, FRG
I. Eisele
Affiliation:
Institute of Physics, Faculty of Electric Engineering, Universität der Bundeswehr München, D-85577 Neubiberg, FRG
M. Stolz
Affiliation:
Siemens AG, Research Laboratories, Otto-Hahn-Ring 6, D-81739 München, FRG
M. Hintermaier
Affiliation:
Siemens AG, Research Laboratories, Otto-Hahn-Ring 6, D-81739 München, FRG
E. Knapek
Affiliation:
Siemens AG, Research Laboratories, Otto-Hahn-Ring 6, D-81739 München, FRG
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Abstract

As reported previously, perfect facets can be achieved at the side walls of submicron silicon mesa structures grown by molecular beam epitaxy (MBE) with micro shadow masks [1]. An essentially self organizing, three-dimensional growth was observed. In this paper we present the results of the epitaxial growth on (001) substrates using long (≥ 1μm), lineshaped mask apertures, which put constraints on the formation of facets. At a growth temperature of 500°C {111} facet formation is observed for lineshaped mesas oriented along the <110> direction of the substrate. Side walls with a length of I μm are perfectly plane, while mesas with a length of 10 μm and more show rough sidewalls. This is explained by a limited silicon adatom diffusion on the facet. For higher flux rates the facet formation is suppressed. This can be understood in terms of a reduced adatom diffusion.

A crossover from {111} to {113} facet formation is observed at growth temperatures above 500°C. A model for the temperature dependent formation of {111} and {113} facets is given.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 351: Symposium V – Molecularly Designed Ultrafine/Nanostructured Materials , 1994 , 393
Copyright
Copyright © Materials Research Society 1994

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References

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