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Fabrication of Poly-silicon Thin Films on Glass and Flexible Substrates using Laser Initiated Metal Induced Crystallization of Amorphous Silicon

Published online by Cambridge University Press:  01 February 2011

Husam Abu-Safe ,
Hameed A. Naseem  and
William D. Brown
Husam Abu-Safe
Affiliation:
habusaf@uark.edu, University of Arkansas, Electrical Engineering, 1168 Cato Springs Road Apt. # 9, Fayetteville, AR, 72701, United States, 479-973-9289, 479-575-7967
Hameed A. Naseem
Affiliation:
hanaseem@uark.edu, University of Arkansas, Arkansas Photovoltaic Research Center, Department of Electrical Engineering, Fayetteville, AR, 72701, United States
William D. Brown
Affiliation:
wdb@uark.edu, University of Arkansas, Arkansas Photovoltaic Research Center, Department of Electrical Engineering, Fayetteville, AR, 72701, United States
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Abstract

Poly-silicon thin films on glass and Kapton® substrates are fabricated using laser initiated metal induced crystallization method. Amorphous silicon films of 200 nm thickness were deposited on the two substrates. The films were capped with 200 nm aluminum films. The annealing laser was a cw Argon-ion laser system. Laser power densities ranging from 4 to 9 W/cm2 were used in the annealing process. The samples were irradiated for various periods of time. X-ray diffraction patterns from the initial results indicated the crystallization of the films. Scanning electron microscopy showed dendritic growth in the annealed samples. The composition analysis of the samples indicated aluminum-silicon alloy regions in the films.

Keywords

amorphousSilaser
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 910: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology – 2006 , 2006 , 0910-A21-10
Copyright
Copyright © Materials Research Society 2006

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References

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