Skip to main content Accessibility help

Excimer Laser Crystallized HWCVD Thin Silicon Films: Electron Field Emission

  • M. Z. Shaikh (a1), K. A. O'Neill (a1), S. K. Persheyev (a1) and M. J. Rose (a1)


Thin silicon films deposited using the Hot-Wire Chemical Vapor Deposition (HWCVD) technique are studied here for the effect of XeCl excimer laser crystallization on their structural, optoelectronic, and electron field emission properties. Excimer Laser Annealing (ELA) of the silicon thin films indicated increased dark conductivity and reduced optical gap. Encouraging Field Emission (FE) results were obtained from XeCl excimer laser processed HWCVD films on Cr, V, Mo, and Ti backplanes. Geometric field enhancement factors from surface measurements and Fowler-Nordheim Theory (FNT) were compared. FE thresholds were also found to be particularly influenced by the backplane material.



Hide All
[1] Carey, J.D. and Silva, S.R.P, Appl. Phys. Lett. 78 (3), 347 (2001).10.1063/1.1339999
[2] Buldum, A. and Lu, J.P., Phys. Rev. Lett. 91 (23), 236801 (2003).10.1103/PhysRevLett.91.236801
[3] Li, Y.B., Bando, Y., Golberg, D., Appl. Phys. Lett. 82 (12), 1962 (2003).10.1063/1.1563307
[4] Silva, S.R.P., Forrest, R.D., Shannon, J.M., J. Vac. Sci. Technol. B 17, 596 (1999).10.1116/1.590601
[5] Tang, Y.F., Silva, S. R. P., Rose, M. J., Appl. Phys. Lett. 80 (22), 41544156 (2002).10.1063/1.1482141
[6] Persheyev, S.K., Goldie, D.M., Rose, M.J., Thin Solid Films 395, 130133 (2001).10.1016/S0040-6090(01)01233-0
[7] Jadkar, S.R., Sali, J.V., Takwale, M.G., Thin Solid Films 395, 206212 (2001).10.1016/S0040-6090(01)01269-X
[8] Toet, D., Takehara, T., Thompson, M.O., J. App. Phys. 85 (11), (1999).10.1063/1.370607
[9] Poruba, A., Fejfar, A., J. App. Phys. 88 (1), (2000).10.1063/1.373635
[10] Mao, D.S. and Zhou, J.Y. et al, J. Vac. Sci Technol. B 17(2), 311 (1999).10.1116/1.590556
[11] Alpuim, P. and Conde, J.P., J. App. Phys. 86 (7), (1999).10.1063/1.371292
[12] Yogoro, Yusuke, Masuda, Atsushi, Matsumura, Hideki, Thin Solid Films, 430 (2003).10.1016/S0040-6090(03)00089-0
[13] Han, Daxing, Habuchi, H., Wang, Qi, J.App. Phys. 87 (4), 18821888 (1999).10.1063/1.372108
[14] Lerner, P. and Miskovsky, N.M., J. Vac. Sci. Technol. B 16, 900 (1998).10.1116/1.589927


Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed