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Evidence of InterDiffusion Effect In Stacked Polycrystalline Sige/Si Layers For Cmos Gate Application

Published online by Cambridge University Press:  10 February 2011

C. Hernandez ,
Y. Campidelli ,
I. Sagnes ,
E. Henrisey ,
F. Martin  and
D. Bensahel
C. Hernandez
Affiliation:
France Telecom, Branche Ddveloppement, CNET, BP 98, 38243, Meylan-Cedex, France
Y. Campidelli
Affiliation:
France Telecom, Branche Ddveloppement, CNET, BP 98, 38243, Meylan-Cedex, France
I. Sagnes
Affiliation:
France Telecom, Branche Ddveloppement, CNET, BP 98, 38243, Meylan-Cedex, France
E. Henrisey
Affiliation:
France Telecom, Branche Ddveloppement, CNET, BP 98, 38243, Meylan-Cedex, France
F. Martin
Affiliation:
CEA-LETI, rue des Martyrs, 38054, Grenoble-Cedex 9, France
D. Bensahel
Affiliation:
France Telecom, Branche Ddveloppement, CNET, BP 98, 38243, Meylan-Cedex, France
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Abstract

Poly-SiGe stacked gates with Ge content ([Ge])varying between zero and 100% have been fabricated using an industriel single-wafer machine. These poly-SiGe layers were characterised and fully integrated in a 0.18 pm CMOS process. Interdiffusion of Si and Ge upon subsequent annealing of the structure has been observed and studied. This interdiffusion effect was found to be responsible for the discrepancy observed between theoretical and practical values of the Ge workfunction ɸms evaluated from our electrical measurements and from those of different authors. A technique for the limitation of this interdiffusion effect has then been developped and is described.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 533: Symposium FF – Epitaxy & Applications of Si-Based Heterostructures , 1998 , 93
Copyright
Copyright © Materials Research Society 1998

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