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Evidence for Different Kinds of Dangling Bond Defects in a-Si:H

Published online by Cambridge University Press:  01 January 1993

Minh Tran ,
H. Fritzsche  and
P. Stradins
Minh Tran
Affiliation:
University of Chicago, The James Franck Institute, Chicago, IL, U.S.A.
H. Fritzsche
Affiliation:
University of Chicago, The James Franck Institute, Chicago, IL, U.S.A.
P. Stradins
Affiliation:
University of Chicago, The James Franck Institute, Chicago, IL, U.S.A.
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Abstract

Comparing the photoconductivity σp of undoped samples with different native defect concentrations we find that light-induced metastable defects decrease the electron lifetime more strongly than the native defects. We discuss the differences between native and metastable dangling bond defects. We find that the constant photocurrent method underestimates the defect concentration in undoped a-Si:H.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 195
Copyright
Copyright © Materials Research Society 1993

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References

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