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Etching of Platinum Thin Films by High Density Ar/Ci2/Hbr Plasma

Published online by Cambridge University Press:  10 February 2011

C.-I. Kim ,
N.-H. Kim ,
E.-G. Chang ,
K.-H. Kwon ,
G.-Y. Yeom  and
Y.-J. Seo
C.-I. Kim
Affiliation:
Department of Electrical Engineering, Chungang Univ., Seoul 156-756, Korea
N.-H. Kim
Affiliation:
Department of Electrical Engineering, Chungang Univ., Seoul 156-756, Korea
E.-G. Chang
Affiliation:
Department of Electrical Engineering, Chungang Univ., Seoul 156-756, Korea
K.-H. Kwon
Affiliation:
Department of Electronic Engineering, Hanseo Univ., Chung-Nam 356-820, Korea
G.-Y. Yeom
Affiliation:
Department of Materials Engineering, Sungkyunkwan Univ., Suwon 440-746, Korea
Y.-J. Seo
Affiliation:
School of Electrical and Electronic Engineering, Daebul Univ., Chun-Nam, Korea
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Abstract

Platinum is widely researched as the electrode material for capacitor of high dielectric films in dynamic random access memory (DRAM) application. However, the dry etching of Pt is difficult because of its chemical stability. So, the dry etching of Pt remains at the preliminary work.

In this work, Pt etching mechanism was investigated by using inductive coupled plasma (ICP) with Ar/Cl2/HBr gas.

The peaks were found due to brominated Pt as well as chlorinated Pt in the XPS (X-ray photoelectron spectroscopy) narrow scan. Ion bombardment effects on the etched surface decreased with increasing HBr/(HBr+Cl2) gas mixing ratio. The maximum etch rate of Pt was 105 nm/min at the HBr/(HBr+Cl2) ratio of 0. And selectivity to SiO2 was good in all samples with various HBr/(HBr+Cl2) gas mixing ratios. These results are consistent with XPS and OES (optical emission spectrometry) and single Langmuir probe.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 514: Symposium I – Advanced Interconnects & Contact Materials & Processes for… , 1998 , 357
Copyright
Copyright © Materials Research Society 1998

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References

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