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Erbium Ion Implantation for Optical Doping

Published online by Cambridge University Press:  22 February 2011

A. Polman
A. Polman*
Affiliation:
FOM-Institute for Atomic and Molecular Physics Kruislaan 407, 1098 SJ Amsterdam, The Netherlands
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Abstract

Erbium is a rare-earth ion which, when incorporated in a solid in the trivalent state, shows characteristic intra-4f emission at 15 µm, an important telecommunication wavelength. A review is given of recent work in the area ofEr ion implantation into soda-lime silicate and AI2O3 optical waveguide films, LiNbO3 and silicon. Structural and optical characteristics are discussed and future challenges for this exciting new field are described.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 316: Symposium A – Materials Synthesis and Processing Using Ion Beams , 1993 , 385
Copyright
Copyright © Materials Research Society 1994

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References

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