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Erbium Doped Si/Sige Waveguide Diodes: Optical And Electrical Characterization

Published online by Cambridge University Press:  10 February 2011

E. Neufeld ,
A. Luigart ,
A. Sticht ,
K. Brunner  and
G. Abstreiter
E. Neufeld
Affiliation:
Walter Schottky Institut, Technische Universitdt Muinchen, Am Coulombwall, D-85748 Garching, Germany
A. Luigart
Affiliation:
Walter Schottky Institut, Technische Universitdt Muinchen, Am Coulombwall, D-85748 Garching, Germany
A. Sticht
Affiliation:
Walter Schottky Institut, Technische Universitdt Muinchen, Am Coulombwall, D-85748 Garching, Germany
K. Brunner
Affiliation:
Walter Schottky Institut, Technische Universitdt Muinchen, Am Coulombwall, D-85748 Garching, Germany
G. Abstreiter
Affiliation:
Walter Schottky Institut, Technische Universitdt Muinchen, Am Coulombwall, D-85748 Garching, Germany
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Abstract

We have fabricated erbium- and oxygen-doped Si/SiGe waveguide diodes showing the characteristic 1.54 µm electroluminescence (EL) from incorporated Er+3, ions. All samples were grown by molecular beam epitaxy (MBE). The EL from the polished end facet of the waveguide was measured with a confocal microscope revealing a spatially narrow emission. Additional annealing was not necessary to improve the luminescence characteristics. Only a weak temperature dependence is found for the EL intensity between 4K and room temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 533: Symposium FF – Epitaxy & Applications of Si-Based Heterostructures , 1998 , 139
Copyright
Copyright © Materials Research Society 1998

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