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Erbium Doped Semiconductor Thin Films Prepared by Rf Magnetron Sputtering

Published online by Cambridge University Press:  21 February 2011

Hong Koo Kim ,
Cheng Chung Li ,
Xiao Ming Fang ,
James Solomon ,
Gerald Nykolak  and
Philippe C. Becker
Hong Koo Kim
Affiliation:
University of Pittsburgh, Department of Electrical Engineering, Pittsburgh, PA 15261
Cheng Chung Li
Affiliation:
University of Pittsburgh, Department of Electrical Engineering, Pittsburgh, PA 15261
Xiao Ming Fang
Affiliation:
Microtronics Associates, Pittsburgh, PA 15213
James Solomon
Affiliation:
University of Dayton, Research Center, OH 45469-0167
Gerald Nykolak
Affiliation:
AT&T, Bell Laboratories, Murray Hill, NJ 07974
Philippe C. Becker
Affiliation:
AT&T, Bell Laboratories, Murray Hill, NJ 07974
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Abstract

Highly Er-doped (∼ 1020 atoms/cm3) silicon and silica films were deposited by RF magnetron sputtering. Erbium was doped into the host material by co-sputtering technique. Deposited films (0.5 - 1.2 µm thick) were characterized by photoluminescence (PL), secondary ion mass spectroscopy (SIMS), and fluorescence decay measurements. Er-doped silica glass films show a strong, room-temperature luminescence at 1.54 µm wavelength. In contrast, Er-doped silicon films show a weak luminescence at room temperature. However, a big enhancement in the Er3+ luminescence was observed after a proper annealing, for example, 900 °C for 30 to 120 min in air ambient, resulting in the luminescence intensities comparable with that of the Er-doped silica films. This enhancement is attributed to the oxygen incorporation into the Si host film during the annealing, thus forming an Er-doped oxide layer on top of the film. The result suggests that Er-O bonding plays important role in forming optically active erbium ions. Erdoped, three-component silicate glass (SiO2 + A12O3 + MgO) films were also sputter deposited to investigate the dependence of Er3+ luminescence on the host material's composition. Even stronger luminescence was observed from the Er-doped, three component silicate glass films compared with the Er-doped SiO2 films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 301: Symposium E – Rare-Earth Doped Semiconductors , 1993 , 55
Copyright
Copyright © Materials Research Society 1993

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References

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