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Epitaxial Growth of CoGa on (100)GaAs by Metal-Organic Molecular Beam Epitaxy

Published online by Cambridge University Press:  10 February 2011

N. Viguier  and
F. Maury
N. Viguier
Affiliation:
CNRS/INPT, Ecole Nationale Supérieure de Chimie, 118 Route de Narbonne, 31077 Toulouse cedex 4, France
F. Maury
Affiliation:
CNRS/INPT, Ecole Nationale Supérieure de Chimie, 118 Route de Narbonne, 31077 Toulouse cedex 4, France
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Abstract

Epitaxial layers of the intermetallic β-CoGa cubic phase were grown at low temperature on (100)GaAs by metal-organic molecular beam epitaxy (MOMBE) using GaEt3 and CpCo(CO)2 as vapor sources. The film composition and the lattice mismatch on (100)GaAs may be adjusted by controlling the molecular beam pressure ratio. The growth on a Co-saturated GaAs surface leads to the formation of bi-phased CoGa-CoAs films whereas epitaxial single-phased β-CoGa layers are grown on a Ga-terminated GaAs surface with the simple cube on cube orientation [100](001 )CoGa//[100](001)GaAs. Annealing experiments under inert atmosphere have shown that MOMBE CoGa films are thermally stable on GaAs until ca. 823 K. Ohmic and Schottky CoGa/GaAs contacts have been made depending on the doping of the substrate by this process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 514: Symposium I – Advanced Interconnects & Contact Materials & Processes for… , 1998 , 461
Copyright
Copyright © Materials Research Society 1998

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References

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