Hostname: page-component-77c89778f8-m42fx Total loading time: 0 Render date: 2024-07-22T00:32:30.481Z Has data issue: false hasContentIssue false
  • English
  • Français

The Epitaxial Growth of Al on Hydrogen Terminated Si(100) Substrates with and Without Ion Bombardment

Published online by Cambridge University Press:  25 February 2011

R. L. McEachernt ,
Dirk Laszig  and
W. L. Brownt
R. L. McEachernt*
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
Dirk Laszig*
Affiliation:
AT&T Bell Laboratories, Holmdel, NJ 07733
W. L. Brownt
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
*
* Lawrence Livermore National Laboratory, Livermore, CA 94550
** Deutsche Telekom, D 4400 Meunster/Westf., Germany
Get access

Abstract

We have demonstrated that aluminum can be grown epitaxially on H-terminated Si(100) substrates under modest vacuum conditions using thermal deposition. The effect of 1 keV to 4 keV ion bombardment during deposition was found to be either minimal or detrimental. Preliminary results from sputter-deposited Al films show very different behavior, with the films tending to relax from the epitaxial (110) texture to a (111) texture.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 260: Symposium C – Advanced Metallization and Processing for Semiconductor Devices and Circuits , 1992 , 953
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Yamada, I., Appl. Surf. Sci. 43 (1989) 23.Google Scholar
[2] Hasan, M. -A., Radnoczi, G., Sundgren, J. E., and Hansson, G. V., Surf. Sci. 236 (1990) 53.Google Scholar
[3] Choi, C. -H., Harper, R. A., Yapsir, A. S., and Lu, T. -M., Appl. Phys. Lett. 51 (1987) 1992.CrossRefGoogle Scholar
[4] Chabal, Y. J., Higashi, G. S., Ragavachari, K., and Burrows, V. A., J. Vac. Sci. Technol A7 (1989) 2104.Google Scholar