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Epitaxial CeO2 Growth on Si (111) for SOI

Published online by Cambridge University Press:  15 February 2011

L. Tye ,
T. Chikyow ,
N. A. El-Masry  and
S. M. Bedair
L. Tye
Affiliation:
North Carolina State University, Department of Materials Science & Engineering Campus Box 7907 Raleigh, NC 27605-7907
T. Chikyow
Affiliation:
On leave from National Research Institute for Metals, Tsukuba Laboratories 1-2-2 Sengen Tsukuba-shi Ibaraki 305 JAPAN
N. A. El-Masry
Affiliation:
North Carolina State University, Department of Electrical & Computer Engineering Campus Box 7911 Raleigh, NC 27605-7911
S. M. Bedair
Affiliation:
North Carolina State University, Department of Electrical & Computer Engineering Campus Box 7911 Raleigh, NC 27605-7911
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Abstract

Epitaxial growth of CeO2 was obtained on the Si(111) surface by laser ablation in UHV atmosphere. However, a dual amorphous layer formed at the interface, yielding a CeO2/α:-CeOx/α-SiO2/Si(111) structure. This structure is speculated to be caused by a reaction occurring between Ce oxide and Si. Post annealing in O2 ambient caused the regrowth of CeO2, eliminated the α-CeOx layer, and increased the thickness of the SiO2 layer. The new CeO2/SiO2/Si(111) structure shows improved breakdown voltage and fewer interfacial states as observed by C-V and I-V measurements. The SiO2 is expected to tie surface states with Si, whereas the single crystal CeO2 will allow the epitaxial growth of lattice-matched Si on this insulating film. The effect of growth conditions and O2 annealing on both the structural and the electrical properties of this epitaxial oxide will be presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 341: Symposium F – Epitaxial Oxide Thin Films and Heterostructures , 1994 , 107
Copyright
Copyright © Materials Research Society 1994

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