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Electrical and Optical Properties of GaAs Heteroepitaxial Films on Si Substrates

Published online by Cambridge University Press:  26 February 2011

Takashi Nishioka ,
Yoshio Itoh  and
Masafumi Yamaguchi
Takashi Nishioka
Affiliation:
NTT Electrical Communications Laboratories, Tokai, Ibaraki-ken 319–111, Japan
Yoshio Itoh
Affiliation:
NTT Electrical Communications Laboratories, Tokai, Ibaraki-ken 319–111, Japan
Masafumi Yamaguchi
Affiliation:
NTT Electrical Communications Laboratories, Tokai, Ibaraki-ken 319–111, Japan
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Abstract

Electrical and optical properties of single-domain GaAs heteroepitaxial films grown on Si(100) by using metalorganic chemical vapor deposition have been investigated. Cathodolumi-nescence and electron-beam induced current experiments have revealed that signal nonuniformities on the film surface agree in number with GaAs microdefect densities observed through chemical etching, rather than conventional aligned etch-pit densities. The cathodoluminescence experiments also indicate that GaAs properties are improved with increases in film thickness. This nonuniformity and the film-thickness dependence are related to GaAs solar cell characteristics fabricated on the Si substrate. A GaAs/Si interface study proves that p-type Si substrates cause type conversions near the interface due to GaAs growth. Evidence of positive interface charges in the GaAs/Si system is determined by using Hall effect measurements, secondary-ion mass spectroscopy and electron-beam induced current experiments.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 77: Symposium D – Interfaces, Superlattices, and Thin Films , 1986 , 791
Copyright
Copyright © Materials Research Society 1987

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References

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