Hostname: page-component-78c5997874-fbnjt Total loading time: 0 Render date: 2024-11-17T19:45:08.780Z Has data issue: false hasContentIssue false
  • English
  • Français

Electrical and Dielectric Characteristics of SrTiO3 Thin Films Grown by PE-MOCVD Technique

Published online by Cambridge University Press:  15 February 2011

Z. Q. Shi ,
C. Chern ,
S. Liang ,
Y. Lu  and
A. Safari
Z. Q. Shi
Affiliation:
EMCORE Corporation, Somerset, NJ 08873;
C. Chern
Affiliation:
EMCORE Corporation, Somerset, NJ 08873;
S. Liang
Affiliation:
EMCORE Corporation, Somerset, NJ 08873;
Y. Lu
Affiliation:
College of Engineering, Rutgers University.
A. Safari
Affiliation:
College of Engineering, Rutgers University.
Get access

Abstract

Epitaxial strontium titanate (SrTiO3) thin films have been grown by plasma enhanced metalorganic chemical vapor deposition (PE-MOCVD) technique on different bottom electrode materials, such as Pt/MgO and YBCO/LaAlO3. The as grown SrTiO3 film exhibited an epitaxial structure with <100> orientation perpendicular to the substrates as examined by X-ray diffraction (XRD). The electrical and dielectric properties of the films were investigated by capacitance-voltage (C-V) and current-voltage (I-V) measurements in a temperature range from 80K to 300K. The dielectric constant and dielectric loss were found to be 320 and 0.08 at 100 kHz and room temperature. The dc leakage current density and breakdown voltage were strongly dependent on the choice of the bottom electrode materials. For the films grown on YBCO/LaAlO3, the leakage current density is 8.8×10−7 A/cm2 at 200 kV/cm and the breakdown voltage is about 2.0 MV/cm. These results indicated that the SrTiO3 films are suitable for many devices applications. The frequency dependence of the dielectric constant and dielectric loss were studied in the range of 12 Hz to 1 MHz at room temperature. With the increase of the frequency, the dielectric constant showed a little decrease, while the dielectric loss exhibited a sharp increase which could be attributed to the electrode resistance loss.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 335: Symposium Y – Metal-Organic Chemical Vapor Deposition of Electronic Ceramics , 1993 , 107
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Scott, J.F., Proceedings of the 8th ISAF, 356, August 31-September 2, 1992.Google Scholar
2. Greenwald, A., Mat. Res. Soc. Symp. Proc., Vol. 243, 457, (1992).CrossRefGoogle Scholar
3. Wills, L.A., J. Crystal Growth, Vol. 107, 712, January (1991)CrossRefGoogle Scholar
4. Sakuma, T., Appl. Phys. Lett., 57 (23), 2431, December (1990)CrossRefGoogle Scholar
5. Pinizzotto, R.F., Mat. Res. Soc. Symp. Proc., Vol. 243, 463 (1992)Google Scholar
6. Liang, S., Chern, C., and Shi, Z.Q., will be published in Mat. Res. Soc. Symp. Proc., (1993)Google Scholar