Hostname: page-component-8448b6f56d-c4f8m Total loading time: 0 Render date: 2024-04-18T08:24:39.210Z Has data issue: false hasContentIssue false
  • English
  • Français

Electrical Activation Behavior of Ion Implanted Silicon in Gallium Arsenide During Rapid Thermal Annealing

Published online by Cambridge University Press:  26 February 2011

J.P. de Souza ,
D.K. Sadana  and
H.J. Hovel
D.K. Sadana
Affiliation:
T.J. Watson Research Center, Yorktown Ileights, NY 10598
H.J. Hovel
Affiliation:
T.J. Watson Research Center, Yorktown Ileights, NY 10598
Get access

Abstract

Rapid thermal annealing (RTA) (800–1000°C, 1–60 s) was performed on capless and silicon nitride (SixNy) capped GaAs samples implanted with Si (30 keV, 4.5×1013cm−2 ) and SiF+ (50 keV, 4.5×1013cm−2 ). The maximum activation for the Si+ implants saturated at 25% (capless) and 42% (capped) and that for the SiF+ implants saturated at 20% (capless) and 35% (capped). The activation degraded at temperatures > 825°C due to surface decomposition in the capless annealing case and at > 925°C due to the cap failure in the capped annealing case. For all the RTA conditions studied here, higher activation always occurred with the Si+ rather SiF+ implants. An activation energy of 0.48 eV for the annealing process was determined from the electrical data. It was also observed that the heating and/or cooling rates can significantly influence the electrical activation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 144: Symposium W – Advances in Materials, Processing and Devices in III-V Compound Semiconductors , 1988 , 495
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Gill, S.S., Solid State Phenomena, Vols 1&2, 282 (1988).Google Scholar
2. Melbon, R.M., Lee, D.H. and .Whelan, J.M., J. Electrochem. Soc. 123, 1413C (1976).Google Scholar
3. Armiento, C.A. and Prince, F.C., Appl. Phys. Lett. 48, 1623 (1986).Google Scholar
4. Kanber, H., Cipolli, R.J., Henderson, W.B. and Whelan, J.M., J Appl. Phys. 57, 4732 (1985).Google Scholar
5. Kuzuhara, M., Nozaki, T. and Kohzu, H., J. Appl. Phys. 58, 1204 (1985).Google Scholar
6. Hiramoto, T., Saito, T. and Ikoma, T., Jap. J. AppI. Phys., 24, L193 (1985).Google Scholar
7. Gill, S.S., J. Electrochem. Soc. 135, 1027 (1988).Google Scholar
8. Cummings, K.D., Pearton, S.J and Vella-Coleiro, G.P., J. Appl. Phys. 60, 163 (1986).Google Scholar
9. Gwillian, k., Dcol, R.S., Blunt, R. and Scaly, B.J., Mat. Res. Soc. Proc. 92, 437 (1987).Google Scholar