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Effects of the Subsequent Ion Irradiation on the Formation Process of β-SiC from Si-C Mixtures Fabricated on Si by Ion Implantation

  • Tadamasa Kimura (a1), Hiroyuki Yamaguchi (a1), Shigemi Yugo (a1) and Yoshio Adachi (a1)

Abstract

The β-SiC formation process through post-implantation annealing of Si-C mixtures fabricated on Si by C-ion implantation at room temperature is studied by means of infrared absorption spectroscopy. It is shown that the formation of B-SiC from the Si-C mixtures is greatly enhanced by the subsequent irradiation of other energetic ions prior to the thermal annealing. The continuous amorphization of the Si-C mixed layers is considered to be the dominant cause for the enhancement of the B-SiC formation. The activation energy of the β-SiC formation process which is 5.3 eV without irradiation is reduced to 4.0 eV by the irradiation of 150 keV, 1 × 1017/cm2 Ar ions.

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[1] Borders, J.A., Picraux, S.T. and Beezhold, W.: Appl. Phys. Lett. 1A (1971) 509 I.P. Akimchenko, Kh.R. Kazdaev and V.V. Krasnopevtsev: Sov. Phys. Semicond. 11 (1977) 1149 T. Kimura, S. Kagiyama and S. Yugo: Thin Solid Films 81 (1981) 319
[2] Kimura, T., Kagiyama, S., Kawamura, A., Yugo, S. and Adachi, Y.: Jpn. J. Appl. Phys. 24 (1985) 1712 T. Kimura, H. Yamaguchi, Luo Ji-Kui, S. Yugo and Y. Adachi: to be submitted
[3] Gibbons, J.F., Johnson, W.S. and Mylroie, S.W.: Projected Range Statics, Semiconductor and Semimetals 2nd Edition (Dowden Hutchinson and Ross, Inc., Stroundsburg, Pennsylvania, 1975)
[4] Davidson, S.M.: Proc. European Conf. on Ion Implantation, Reading (Peter Peregrinus Ltd., Stevenage, 1970) p. 238
[5] Poate, J.M. and Williams, J.S.: Ion Implantation and Beam Processing ed. by Williams, J.S. and Poate, J.M. (Academic Press Australia, 1984) p.13

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Effects of the Subsequent Ion Irradiation on the Formation Process of β-SiC from Si-C Mixtures Fabricated on Si by Ion Implantation

  • Tadamasa Kimura (a1), Hiroyuki Yamaguchi (a1), Shigemi Yugo (a1) and Yoshio Adachi (a1)

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