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Effects of the Subsequent Ion Irradiation on the Formation Process of β-SiC from Si-C Mixtures Fabricated on Si by Ion Implantation

Published online by Cambridge University Press:  25 February 2011

Tadamasa Kimura ,
Hiroyuki Yamaguchi ,
Shigemi Yugo  and
Yoshio Adachi
Tadamasa Kimura
Affiliation:
University of Electro-Communications, 1-5-1 Chofugaoka, Chofushi, Tokyo 182, Japan
Hiroyuki Yamaguchi
Affiliation:
University of Electro-Communications, 1-5-1 Chofugaoka, Chofushi, Tokyo 182, Japan
Shigemi Yugo
Affiliation:
University of Electro-Communications, 1-5-1 Chofugaoka, Chofushi, Tokyo 182, Japan
Yoshio Adachi
Affiliation:
University of Electro-Communications, 1-5-1 Chofugaoka, Chofushi, Tokyo 182, Japan
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Abstract

The β-SiC formation process through post-implantation annealing of Si-C mixtures fabricated on Si by C-ion implantation at room temperature is studied by means of infrared absorption spectroscopy. It is shown that the formation of B-SiC from the Si-C mixtures is greatly enhanced by the subsequent irradiation of other energetic ions prior to the thermal annealing. The continuous amorphization of the Si-C mixed layers is considered to be the dominant cause for the enhancement of the B-SiC formation. The activation energy of the β-SiC formation process which is 5.3 eV without irradiation is reduced to 4.0 eV by the irradiation of 150 keV, 1 × 1017/cm2 Ar ions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 97: Symposium I – Novel Refractory Semiconductors , 1987 , 289
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

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