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The Effects of Silicon Source Gas on PECVD SiO2 Properties*

Published online by Cambridge University Press:  22 February 2011

James A. Burns  and
Edward F. Gleason
James A. Burns
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Ma. 02173
Edward F. Gleason
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Ma. 02173
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Abstract

Silicon dioxide was plasma-deposited at 300C using either the reaction of silane and nitrous oxide or the reaction of tetraethylorthosilicate with oxygen. The structural and electronic properties of films produced by both reactions were studied as functions of post-deposition heat treatments. The former reaction produced films which were more dense and less conductive than the latter. A model was developed to determine the amount and location of charge in the deposited films. The charge was found to be dependent on the reaction and the post-deposition anneal.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 284: Symposium G – Amorphous Insulating Thin Films , 1992 , 187
Copyright
Copyright © Materials Research Society 1993

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Footnotes

*

This work was sponsored by the Department Of The Air Force.

References

REFERENCES

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