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The Effects of Air Annealing on Cuinse2 Thin Films Grown by Molecular Beam Fpitaxy

Published online by Cambridge University Press:  10 February 2011

I. Kim ,
S. Niki ,
P. J. Fons ,
T. Kurafuji ,
M. Okutomi  and
A. Yamada
I. Kim
Affiliation:
Eleetrotechnical Laboratory, MITI, 1-1-4, Umezono, Tsukuba, Ibaraki 305, Japan.
S. Niki
Affiliation:
Eleetrotechnical Laboratory, MITI, 1-1-4, Umezono, Tsukuba, Ibaraki 305, Japan.
P. J. Fons
Affiliation:
Eleetrotechnical Laboratory, MITI, 1-1-4, Umezono, Tsukuba, Ibaraki 305, Japan.
T. Kurafuji
Affiliation:
Eleetrotechnical Laboratory, MITI, 1-1-4, Umezono, Tsukuba, Ibaraki 305, Japan.
M. Okutomi
Affiliation:
Eleetrotechnical Laboratory, MITI, 1-1-4, Umezono, Tsukuba, Ibaraki 305, Japan.
A. Yamada
Affiliation:
Eleetrotechnical Laboratory, MITI, 1-1-4, Umezono, Tsukuba, Ibaraki 305, Japan.
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Abstract

High quality epitaxial CuInSe2 (CIS) films with a range of Cu/In ratios (γ) = 0.80∼2.24 grown by molecular beam epitaxy (MBE) have been post-annealed at temperatures of TA=200∼400°C in both dry-air and Ar atmospheres. Changes in the structure and composition due to annealing have been investigated. The only oxide observed experimentally for both the In-rich, and the Cu-rich CIS films was In2O3. This is consistent with equilibrium thermodynamic calculations which indicate that In2O3 is the mnst stable solid oxide phase. During annealing some reac-tions arc probably kinetically limited making the annealing process a function of time and temperature. but the equilibrium thermodynamic results reported here simplify interpretation of phase space.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 426: Symposium J – Thin Films for Photovoltaic and Related Device , 1996 , 261
Copyright
Copyright © Materials Research Society 1996

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