Hostname: page-component-78c5997874-s2hrs Total loading time: 0 Render date: 2024-11-17T18:09:20.753Z Has data issue: false hasContentIssue false

Effect of Template Materials on the Top Morphologies of Cu Nanowires

Published online by Cambridge University Press:  21 March 2011

Ran-Jin Lin
Affiliation:
Electronics Research & Service Organization, Industrial Technology Research Institute, Hsinchu, 300, Taiwan, Republic of China
Luh-Huei Wu
Affiliation:
Electronics Research & Service Organization, Industrial Technology Research Institute, Hsinchu, 300, Taiwan, Republic of China
Ching-Hsiang Tsai
Affiliation:
Electronics Research & Service Organization, Industrial Technology Research Institute, Hsinchu, 300, Taiwan, Republic of China
Chien-Min Sung
Affiliation:
KINIK company, Ying-Ko, Taipei County, 239, Taiwan, Republic of China
Get access

Abstract

An array of copper nanowires (50-110 nm in diameters) was deposited by the electrolysis of CuSO4-H2SO4 solution at room temperature using DC current. The array was created by forcing deposited copper to follow a pattern of nano tunnels. These nano tunnels were formed with two different methods: anodizing an aluminum film that coated on a silicon wafer to form nano holes within oxidized alumina, and etching the ion-tracked polycarbonate membrane.

The difference in top morphologies of the Cu nanowires in these templates is very marked. The copper nano wires deposited in anodized alumina template form the separate spherical balls with diameter of about 10 νμ on the surface of the alumina film, in spite of the template thickness of only 0.5 νm. In contrast, no such Cu agglomeration was formed with copper nano wires deposited in holes of polycarbonate. This variance in copper morphologies is likely due to the difference of the interface energy between Cu and anodic alumina and that of Cu and polycarbonate.

Type
Research Article
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Xia, Younan, Yang, Peidong, Sun, Yugang, Wu, Yiying, Mayers, Brian, Gates, Byron, Yin, Yadong, Kim, Franklin, and Yan, Haoquan, Adv. Mater. 15, 353 (2003).Google Scholar
2. Sharifi, F., Herzog, A. V., and Dynes, R. C., Phys. Rev. Lett. 71, 428 (1993).Google Scholar
3. Giordano, N., Physica B 203, 460 (1994).Google Scholar
4. Yin, A. J., Li, J., Jian, W., Bennett, A. J., and Xu, J. M., Appl. Phys. Lett. 79, 1039 (2001).Google Scholar
5. Dobrev, D., Vetter, J., and Angert, N., Nucl. Instr. And Meth. B 149, 207 (1999).Google Scholar
6. Meier, J., Doudin, B., Ansermet, J.P., J. Appl. Phys. 79, 6010 (1996).Google Scholar
7. Wang, L., Yu-Zhang, K., Metrot, A., Bonhomme, P. and Troyon, M., Thin solid Films 288, 86 (1996).Google Scholar
8. Masuda, H. and Fukuda, K., Science 268, 1466 (1995).Google Scholar
9. Alwitt, R. S. and Kudo, T., J. Met. Finish. Soc. Jpn., 32, 226 (1981).Google Scholar
10. Toimil, M.E. Molares, J. Brotz, Buschmann, V., Dobrev, D., Neumann, R., Scholz, R., Schuchert, I.U., Trautmann, C., and Vetter, J., Nuclear Instruments and Methods in Physics Research B 185, 192 (2001).Google Scholar