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Effect of Structural Phase Transition on Thermally Activated Time-of-Flight Charge Carrier Mobility and Field Effect Transport in Diindenoperylene Single Crystals

Published online by Cambridge University Press:  26 February 2011

Ashutosh Kumar Tripathi  and
Jens Pflaum
Ashutosh Kumar Tripathi
Affiliation:
a.tripathi@physik.uni-stuttgart.de, University of Stuttgart, 3rd Institute of Physics, Pfaffenwaldring 57, Stuttgart, D 70550, Germany
Jens Pflaum
Affiliation:
j.pflaum@physik.uni-stuttgart.de, University of Stuttgart, 3rd Institute of Physics, Pfaffenwaldring 57, Stuttgart, 70550, Germany
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Abstract

We report on the growth, the structural and the electronic characterization of semiconducting Diindenoperylene (DIP) single crystals. Temperature dependent x-ray measurements reveal a structural phase transition occurring at around 370 K. Temperature dependent time-of-flight (TOF) hole mobility shows a thermally activated behavior up to the phase transition temperature with an activation energy of ∼ 180 meV. A field effect is successfully demonstrated on transistors based on DIP single crystal and yields a room temperature hole mobility of about ∼ 2×10−5 cm2/Vs. Unlike TOF measurements, no electron transport was observed in field-effect transistors (FETs) geometry which could be attributed to the large injection barrier for electrons at the DIP-Ag-contact interface in contrast to the injection barrier for holes.

Keywords

organiccrystal growthsemiconducting
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 965: Symposium S – Organic Electronics – Materials, Devices and Applications , 2006 , 0965-S09-34
Copyright
Copyright © Materials Research Society 2007

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References

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