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The Effect of Phosphine Pressure on the Band Gap of Ga0.5In0.5P

Published online by Cambridge University Press:  22 February 2011

Sarah R. Kurtz ,
D. J. Arent ,
K. A. Bertness  and
J. M. Olson
Sarah R. Kurtz
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO 80401
D. J. Arent
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO 80401
K. A. Bertness
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO 80401
J. M. Olson
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO 80401
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Abstract

The band gap of Ga0.51n0.5P is studied as a function of phosphine pressure, B-type substrate misorientation, growth rate, and growth temperature, with emphasis placed on the effect of the phosphine pressure. Over most of the parameter space explored (high temperatures, large substrate misorientations, and low growth rates), the band gap increases with decreasing phosphine. This increase is proposed to be caused by lower phosphorus coverage of the surface, resulting in a different surface structure that doesn't promote ordering. The implications of this effect on the observed variations of band gap with growth temperature, substrate misorientation, and growth rate are discussed. For regions of parameter space in which the ordering appears to be kinetically limited by surface diffusion, the band gap increases slightly with phosphine pressure, consistent with observations that increased group-V pressure decreases the group-III surface diffusion length.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 340: Symposium E – Compound Semiconductor Epitaxy , 1994 , 117
Copyright
Copyright © Materials Research Society 1994

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References

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