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The Effect of Growth Interruption on Structural and Optical Properties of InAsP/InP Multiple Quantum Wells

Published online by Cambridge University Press:  21 February 2011

C. A. Tran ,
J. T. Graham ,
R. A. Masut  and
J. L. Brebner
C. A. Tran
Affiliation:
Groupe de Recherche en Physique et Technologie des Couches Minces, Université de Montréal, Département de Physique, C.P. 6128, Suce. "Centre-ville". Montréal, Québec, CANADA, H3C 3J7.
J. T. Graham
Affiliation:
Groupe de Recherche en Physique et Technologie des Couches Minces, Université de Montréal, Département de Physique, C.P. 6128, Suce. "Centre-ville". Montréal, Québec, CANADA, H3C 3J7.
R. A. Masut
Affiliation:
École Polytechnique de Montréal, Département de Génie Physique, C.P. 6079, Suce." Centre-ville", Montréal, Québec, CANADA, H3C 3A7.
J. L. Brebner
Affiliation:
Groupe de Recherche en Physique et Technologie des Couches Minces, Université de Montréal, Département de Physique, C.P. 6128, Suce. "Centre-ville". Montréal, Québec, CANADA, H3C 3J7.
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Abstract

A systematic study of the effect of growth interruption on the interface roughness of InAsxP1-x/InP heterostructures has been carried out. High resolution X-ray diffraction, photoluminescence and optical absorption measurements for InAsP/InP strained multiple quantum wells reveal that the InAsP/InP interface is very sensitive to growth interruption. For nonoptimal growth interruption procedures a large density of interface states is created, probably as a consequence of compositional modifications within the interface region. We find that photoluminescence on its own is insufficient to characterize the interface roughness in our samples, since even for narrow low-temperature peak emissions corresponding to the multiple quantum wells, the absorption spectrum may reveal a significant density of interface states.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 326: Symposium M – Growth, Processing, and Characterization of Semiconductor Heterostructures , 1993 , 115
Copyright
Copyright © Materials Research Society 1994

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