Hostname: page-component-78c5997874-xbtfd Total loading time: 0 Render date: 2024-11-18T16:53:16.906Z Has data issue: false hasContentIssue false
  • English
  • Français

Effect of Electrode Materials on the Microstructure of Sol-Gel Derived Pzt Ferroelectric Thin Films

Published online by Cambridge University Press:  25 February 2011

Sharon A. Myers  and
Edward R. Myers
Sharon A. Myers
Affiliation:
National Semiconductor, 2900 Semiconductor Drive, Santa Clara, CA 95051
Edward R. Myers
Affiliation:
National Semiconductor, 2900 Semiconductor Drive, Santa Clara, CA 95051
Get access

Abstract

A wide range of electrode materials have been investigated for use in ferroelectric-silicon CMOS technology. Numerous metal and metal-oxide films were deposited on silicon substrates and coated with sol-gel derived ferroelectric thin films. The films were sintered in either a diffusion furnace or by rapid thermal processing. Transmission electron microscopy was used to investigate the evolution of the resulting ferroelectric thin film microstructure and ferroelectric / electrode material interactions.

Microstructural differences such as the volume fraction of the ferroelectric perovskite and pyrochlore phase, domains and grain structure are correlated with electrical results. A strong microstructural dependence on the substrate was found for the Cr, Zr, Hf and Ni electrode materials. In general, chromium and other metal-oxide films had high leakage currents and large volume fractions of the non-ferroelectric pyrochlore phase. Nickel electrodes displayed the best electrical results, but the microstructure is very different from the other ferroelectric films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 243: Symposium G – Ferroelectric Thin Films II , 1991 , 107
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Kingon, A.I., Hren, P.D., Rou, S.H., AI-Shareef, H.N., Ameen, M.S., and Auciello, O.H., 3rd Int. Symp. on Integrated Ferroelectrics, 1991.Google Scholar
2. Azuma, M., Nasu, T., Katsu, S., Otsuki, T. and Kano, G., 3rd Int. Symp. on Integrated Ferroelectrics, 1991.Google Scholar
3. Sreenivas, K. et al. , Mat. Res. Symp. Vol. 200, 1990, 255.Google Scholar
4. Fraser, D.B. and Maldonado, J.R., J.Appl.Phys.,41,5,1970.Google Scholar
5. Myers, S.A. and Chapin, L.N., Mat. Res. Symp. Vol. 200,1990,231 Google Scholar
6 Hsueh, C.C. and Mecartney, M.L., Mat. Res. Symp. Vol. 200,1990,219.Google Scholar
7. Revesz, P., Li, J., Szabo, N., Mayer, J.W., Caudillo, D. and Myers, E.R., Mat. Res. Soc. Symp.,this proceedings.Google Scholar