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Effect of Electrode Materials on the Microstructure of Sol-Gel Derived Pzt Ferroelectric Thin Films

Published online by Cambridge University Press:  25 February 2011

Sharon A. Myers  and
Edward R. Myers
Sharon A. Myers
Affiliation:
National Semiconductor, 2900 Semiconductor Drive, Santa Clara, CA 95051
Edward R. Myers
Affiliation:
National Semiconductor, 2900 Semiconductor Drive, Santa Clara, CA 95051
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Abstract

A wide range of electrode materials have been investigated for use in ferroelectric-silicon CMOS technology. Numerous metal and metal-oxide films were deposited on silicon substrates and coated with sol-gel derived ferroelectric thin films. The films were sintered in either a diffusion furnace or by rapid thermal processing. Transmission electron microscopy was used to investigate the evolution of the resulting ferroelectric thin film microstructure and ferroelectric / electrode material interactions.

Microstructural differences such as the volume fraction of the ferroelectric perovskite and pyrochlore phase, domains and grain structure are correlated with electrical results. A strong microstructural dependence on the substrate was found for the Cr, Zr, Hf and Ni electrode materials. In general, chromium and other metal-oxide films had high leakage currents and large volume fractions of the non-ferroelectric pyrochlore phase. Nickel electrodes displayed the best electrical results, but the microstructure is very different from the other ferroelectric films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 243: Symposium G – Ferroelectric Thin Films II , 1991 , 107
Copyright
Copyright © Materials Research Society 1992

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References

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