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The Effect of Copper on the Titanium-Silicon Dioxide Rbaction and the Implications for Self-Encapsulatin G. Self-Adhering Metallization Lines

Published online by Cambridge University Press:  25 February 2011

Stephen W. Russell ,
Jian Li ,
Jay W. Strane  and
James W. Mayer
Stephen W. Russell
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY
Jian Li
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY
Jay W. Strane
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY
James W. Mayer
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY
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Abstract

Co-evaporated Cu-Ti films on thermally-oxidized Si substrates were annealed in vacuum at temperatures between 300 and 700°C. Reactions within the films and between film and substrate were monitored by Rutherford backscattering spectrometry, X-ray diffraction, transmission electron microscopy and sheet resistance. We found that, despite the competition from intermetallic compound formation, the Cu-Ti films react with SiO2 beginning at 400°C, with Ti migrating to the SiO2 interface to form both a suicide, Ti5Si3, and an oxide and to the free surface to form additional oxide. The reaction leaves relatively pristine Cu. Above 600°C, however, Cu begins to react with the underlying suicide. By comparison, pure Ti reacts with SiO2 only above ∼700°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 260: Symposium C – Advanced Metallization and Processing for Semiconductor Devices and Circuits , 1992 , 763
Copyright
Copyright © Materials Research Society 1992

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References

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