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Effect of Buried Surface Structure on Solid Phase Epitaxy of GE on SI (111)-7×7

Published online by Cambridge University Press:  15 February 2011

Olof C. Hellman
Olof C. Hellman*
Affiliation:
Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba, Ibaraki 305 Japan, and NTT Basic Research Laboratories, 3–9–11 Midori-cho, Musashino, Tokyo 180, Japan
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Abstract

We study the crystallization of a thin film of amorphous Ge deposited at room temperature on Si (111). Features of the silicon surface buried beneath the Ge film are shown to affect the rate of crystallization. In particular, solid phase epitaxy is observed to be enhanced at surface steps and defects in the surface reconstruction. It is further shown that one-dimensional crystallization patterns can be caused by impurity-Mediated crystallization. Precipitates of an impurity rich phase migrate in the plane of the film, leaving behind a crystalline trail. The Migration path of these precipitates is also dependent on the buried surface structure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 317: Symposium B – Mechanisms of Thin Film Evolution , 1993 , 47
Copyright
Copyright © Materials Research Society 1994

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References

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