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Dry Etching of Ta-Si-N Diffusion Barrier Material in Cf4+02 Gas Mixtures

Published online by Cambridge University Press:  25 February 2011

G.F. McLane ,
L. Casas ,
J.S Reid ,
E. KoIawa  and
M-A. Nicolet
G.F. McLane
Affiliation:
Army Research Laboratory, Ft. Monmouth, NJ 07703
L. Casas
Affiliation:
Army Research Laboratory, Ft. Monmouth, NJ 07703
J.S Reid
Affiliation:
California Institute of Technology, Pasadena, CA 91125
E. KoIawa
Affiliation:
California Institute of Technology, Pasadena, CA 91125
M-A. Nicolet
Affiliation:
California Institute of Technology, Pasadena, CA 91125
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Abstract

Sputtered Ta36Si14N50 amorphous diffusion barrier layers were reactive ion etched in CF4+02 plasmas. Etch rate varied with gas composition, with 15 percent 02 concentration producing maximum etch rate. Etch rates increased with both pressure and power. Etching proceeded only after an initial delay time which was dependent upon gas composition and applied power. The delay time was probably caused by the presence of a surface native oxide which must first be removed before etching can commence. Auger electron spectroscopy measurements showed the native oxide to be approximately 2 nm thick on as-grown samples, and indicate that near-surface stoichiometry is maintained on etched samples.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 337: Symposium B – Advanced Metallization for Devices and Circuits—Science, Technology and Manufacturing III , 1994 , 669
Copyright
Copyright © Materials Research Society 1994

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References

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