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Dry Etching of Copper at High Rates

Published online by Cambridge University Press:  25 February 2011

Janos Farkas ,
Francois Rousseau ,
Kai-Ming Chi ,
Toivo T. Kodas  and
Mark J. Hampden-Smith
Janos Farkas
Affiliation:
Chemical Engineering Department, University of New Mexico, Albuquerque, NM 87131
Francois Rousseau
Affiliation:
Chemical Engineering Department, University of New Mexico, Albuquerque, NM 87131
Kai-Ming Chi
Affiliation:
Chemistry Department, University of New Mexico, Albuquerque, NM 87131
Toivo T. Kodas*
Affiliation:
Chemical Engineering Department, University of New Mexico, Albuquerque, NM 87131
Mark J. Hampden-Smith*
Affiliation:
Chemistry Department, University of New Mexico, Albuquerque, NM 87131
*
#Authors to whom correspondence should be addressed
#Authors to whom correspondence should be addressed
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Abstract

Three new methods for dry etching of copper at temperatures below 200°C have been developed. The first relies on the formation of volatile CICu(PR3)2 species via reaction of PR3 with CuCI where R = ethyl, and butyl. The second relies on the reaction of Cu(hfac)2 and neutral ligands L such as butyne, pentyne or bistrimethylsilylacetylene to form (hfac)CuL. The last approach involves reaction of CuO with hexafluoroacetylacetone (hfacH) to form Cu(hfac)2 and water. These approaches have provided etch rates as high as 1 μm/min at 150°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 236: Symposium B – Photons and Low Energy Particles in Surface Processing , 1991 , 507
Copyright
Copyright © Materials Research Society 1992

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