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Direct Formation of GaAs-GaAlAs Quantum Dots Structure by Droplet Epitaxy

Published online by Cambridge University Press:  21 February 2011

Nobuyuki Koguchi ,
Keiko Ishige  and
Shiro Tsukamoto
Nobuyuki Koguchi
Affiliation:
National Research Institute for Metals, Tsukuba Laboratories, 1–2–1 Sengen, Tsukuba, Ibaraki 305
Keiko Ishige
Affiliation:
National Research Institute for Metals, Tsukuba Laboratories, 1–2–1 Sengen, Tsukuba, Ibaraki 305
Shiro Tsukamoto
Affiliation:
National Research Institute for Metals, Tsukuba Laboratories, 1–2–1 Sengen, Tsukuba, Ibaraki 305
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Abstract

Numerous GaAs epitaxial microcrystals surrounded mainly by (111) and (110) facets having nearly equal size were grown on a sulfur(S)–terminated GaAs or GaALAs surface by sequentially supplying Ga and As molecular beams. The GaALAs layer growth over the GaAs microcrystals was performed by MEE process for burying GaAs microcrystals.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 326: Symposium M – Growth, Processing, and Characterization of Semiconductor Heterostructures , 1993 , 269
Copyright
Copyright © Materials Research Society 1994

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