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Deposition Chemistry and Structure of Amorphous Fluorinated Silicon Nitride

Published online by Cambridge University Press:  26 February 2011

Mark A. Petrich ,
Rhett E. Livengood ,
Dennis W. Hess  and
Jeffrey A. Reimer
Mark A. Petrich
Affiliation:
Department of Chemical Engineering, University of California, Berkeley, California 94720-9989
Rhett E. Livengood
Affiliation:
Department of Chemical Engineering, University of California, Berkeley, California 94720-9989
Dennis W. Hess
Affiliation:
Department of Chemical Engineering, University of California, Berkeley, California 94720-9989
Jeffrey A. Reimer
Affiliation:
Department of Chemical Engineering, University of California, Berkeley, California 94720-9989
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Abstract

The deposition chemistry, optical properties, and structure of plasma-deposited fluorinated silicon nitride films are studied and compared to available results of other researchers. Fluorinated films show an increase in deposition rate and optical band gap, and a decrease in refractive index and film stress compared to unfluorinated silicon nitride films. Fluorine concentration in the films ranges from 5 to 25 atomic percent. The total hydrogen concentration of fluorinated films is lower than that of unfluorinated films. The improved thermal stability of fluorinated films as compared to unfluorinated films is explained by a significant decrease in hydrogen bonded to silicon. All films hydrolyze to some extent and films with large fluorine concentrations hydrolyze rapidly to silicon dioxide. The microstructure of fluorinated films consists of clustered silicon-fluorine and nitrogen-hydrogen regions within an amorphous silicon-nitrogen matrix.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 118: Symposium E – Amorphous Silicon Technology , 1988 , 67
Copyright
Copyright © Materials Research Society 1988

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