Defect creation by electron beam irradiation is compared with that by light soaking in a-Si1-xNx:H films. For the film with x=0.06, the ESR spin density increases by 20-keV electron beam irradiation without changes in the g-value. However, for the film with x=0.47, the ESR spin density increases with accompanying the decrease in the g-value from 2.0042 to 2.0034. The decrease in the g-value can be explained by increasing number of N atoms at the backbond site of the Si atom having the dangling bond. Light soakings does not change the g-value of the ESR signals of the films.