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Defect Creation by Electron Beam Irradiation in Amorphous Silicon Nitride Films Compared with That by Light Soaking

Published online by Cambridge University Press:  17 March 2011

Tatsuo Shimizu ,
Yuji Kawashima  and
Minoru Kumeda
Tatsuo Shimizu
Affiliation:
Department of Electrical and Electronic Engineering, Kanazawa University, Kanazawa 920-8667, Japan
Yuji Kawashima
Affiliation:
Department of Electrical and Electronic Engineering, Kanazawa University, Kanazawa 920-8667, Japan
Minoru Kumeda
Affiliation:
Department of Electrical and Electronic Engineering, Kanazawa University, Kanazawa 920-8667, Japan
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Abstract

Defect creation by electron beam irradiation is compared with that by light soaking in a-Si1-xNx:H films. For the film with x=0.06, the ESR spin density increases by 20-keV electron beam irradiation without changes in the g-value. However, for the film with x=0.47, the ESR spin density increases with accompanying the decrease in the g-value from 2.0042 to 2.0034. The decrease in the g-value can be explained by increasing number of N atoms at the backbond site of the Si atom having the dangling bond. Light soakings does not change the g-value of the ESR signals of the films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 664: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2001 , 2001 , A14.6
Copyright
Copyright © Materials Research Society 2001

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References

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