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Damage and Strain in Epitaxial Ge0.10Si0.90 After Si Implantation From 40 to 150 °C

  • A. Vantomme (a1), J.H. Song (a2), D.Y.C. Lie (a3), F.H. Eisen (a3), M.-A. Nicolet (a3), T.K. Cams (a4) and K.L. Wang (a4)...

Abstract

The damage and strain produced in a nearly pseudomorphic Ge0.10Si0.90 film on Si(100) by implantation of 320 keV 28Si+ ions at 40 to 150 °C and doses from 1 to 30 x 10l4/cm 2 have been measured by MeV 4He channeling spectrometry and high resolution x-ray diffractometry. Both the implantation-induced damage and strain are sensitive to the implantation temperatures. The damage as characterized by channeling decreases with the temperature of implantation for all doses and becomes minimal at 150 °C. The implantation-induced perpendicular strain does likewise, but an excess of about 6 % of its intrinsic strain remains at the strain maximum even at 150 °C.

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2 Haynes, T. E. and Holland, O. W.., Nucl. Instrum. Methods, B 81,901(1993).
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Damage and Strain in Epitaxial Ge0.10Si0.90 After Si Implantation From 40 to 150 °C

  • A. Vantomme (a1), J.H. Song (a2), D.Y.C. Lie (a3), F.H. Eisen (a3), M.-A. Nicolet (a3), T.K. Cams (a4) and K.L. Wang (a4)...

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