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CoSi2 Formation Through Co/Ti Multilayer Reacting with Si-(100) Substrate

Published online by Cambridge University Press:  25 February 2011

Feng Hong ,
Bijoy Patnaik  and
George A. Rozgonyi
Feng Hong
Affiliation:
Dept. of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–7916
Bijoy Patnaik
Affiliation:
Dept. of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–7916 Dept. of Physics and Astronomy, University of North Carolina, Chapel Hill, NC 27599–3255
George A. Rozgonyi
Affiliation:
Dept. of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–7916
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Abstract

In this work, Co/Ti multilayers were deposited on Si-(100) substrates by dual source thermal evaporation. Oxygen was found to be selectively incorporated into the Ti layers during the deposition. The samples were then treated by a two step annealing process. A —6nm Co2Si + CoSi2 layer was formed at the original Ti/Si interface after a 550°C, 2hr. annealing. The Ti(O) layers acted as selective diffusion membrane for Co and Si during this interaction. The morphology of the suicide layer was dependent on the thickness of the Ti(O) barrier layer. Selective removal via wet etching of the upper layers and a 750°C annealing produced stoichiometric and uniform epitaxial cobalt disilicide with a reduced film resistivity. A very flat top surface with no sign of groving or agglomeration and a much improved interface with the Si substrates were obtained.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 238: Symposium Cb – Structure and Properties of Interfaces in Materials , 1991 , 587
Copyright
Copyright © Materials Research Society 1992

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References

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