Hostname: page-component-848d4c4894-xm8r8 Total loading time: 0 Render date: 2024-06-22T04:11:29.509Z Has data issue: false hasContentIssue false
  • English
  • Français

Correlation between microstructure, DC resistivity and magnetoresistance of SrRuO3 films.

Published online by Cambridge University Press:  11 February 2011

K. Khamchane ,
R. Gunnarsson ,
Z.G. Ivanov ,
A. Vorobiev ,
P. Rundqvist′  and
S. Gevorgian
K. Khamchane
Affiliation:
Department of Microelectronics and Nanoscience, Chalmers University of Technology and Göteborg University, SE -412 96 Göteborg, Sweden.
R. Gunnarsson
Affiliation:
Department of Microelectronics and Nanoscience, Chalmers University of Technology and Göteborg University, SE -412 96 Göteborg, Sweden.
Z.G. Ivanov
Affiliation:
Department of Microelectronics and Nanoscience, Chalmers University of Technology and Göteborg University, SE -412 96 Göteborg, Sweden.
A. Vorobiev
Affiliation:
Department of Microelectronics, Chalmers University of Technology, SE-4 1296 Göteborg, Sweden lnstitute for Physics of Microstructures RAS, N. Novgorod, GSP-105, 603600, Russia
P. Rundqvist′
Affiliation:
Department of Microelectronics, Chalmers University of Technology, SE-4 1296 Göteborg, Sweden
S. Gevorgian
Affiliation:
Department of Microelectronics, Chalmers University of Technology, SE-4 1296 Göteborg, Sweden Microwave and High Speed research Centre, Ericsson Microwave Systems, 431 84 Mölndal, Sweden
Get access

Abstract

We have investigated the correlation between microstructure, DC resistivity and magnetoresistance of SrRuO3 thin films. The films were epitaxially grown by pulsed laser deposition on (001) SrTiO3 substrates in a temperature range of 690–810°C. According to x-ray measurements, the structure of all films is a mixture of highly oriented domains of strained orthorhombic phases (ortho-I and ortho-II) with different lattice parameters. Films deposited at 780°C show a minimum resistivity (270 μΩcm at 300 K) and a maximum magnetoresistance (8% at 5 K). These films consist mainly of ortho-I phase (a=0.393 nm). Films deposited at 690°C (predominantly ortho-II) have the highest resistivity (up to 1700 μΩcm at 300 K) and lowest magnetoresistance (3% at 5K).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 751: Symposium Z – Structure-Property Relationships of Oxide Surfaces and Interfaces II , 2002 , Z3.20
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Bensch, W., Schmalle, H. W., and Reller, A.. Solid State Jonics, Diffusion & Reactions, 43: 171, 1990 Google Scholar
2. Jiang, J. C., Pan, X. Q., and Chen, C. L.. Applied Physics Letter, 72(8): 909, 1998.Google Scholar
3. Zakharov, N. D., Satyalakshmi, K. M., Koren, G., and Hesse, D.. Journal of Materials Research, 14(11): 4385, 1999.Google Scholar
4. Klein, L., Dodge, J.S., Ahn, C. H., Reiner, J. W., Mieville, L., Geballe, T. H., Beasley, M. R., and Kapitulnik, A.. Journal of Physics Condensed Matter, 8(48): 10111, 1996.Google Scholar
5. Gausepohl, C., Lee, M., Char, K., Rao, R. A., and Eom, C. B.. Physical Review B, 52(5): 3459, 1995.Google Scholar
6. Gan, Q., Rao, R. A., Eom, C. B., Garrett, J. L., and Lee, M.. Applied Physics Letter, 72(8): 978, 1998.Google Scholar
7. Gupta, A., Hussey, B. W., and Shaw, T. M.. Materials Research Bulletin, 31(12): 1463, 1996.Google Scholar
8. Eom, C. B, Cava, R. J., Fleming, R. M., Philips, J. M., van Dover, R. B., Marshall, J. H., Hsu, J. W. P., Krajewski, J. J, and Peck, W. F. Jr. Science, 258(5098): 1766, 1992.Google Scholar
9. Iliev, M., Thomsen, C., Hadjiev, V., and Cardona, M.. Physical Review B, 47(18): 12341, 1993.Google Scholar
10. Cao, G., McCall, S., Shepard, M., Crow, I.E., and Guertin, R. P.. Physical Review B, 56(1): 321, 1997.Google Scholar