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Concentration Measurements and Depth Profiling of Phosphorus and Boron by Means of (p,γ) Resonant Reactions

Published online by Cambridge University Press:  22 February 2011

M. J. M. Pruppers ,
F. Zijderhand ,
F. H. P. M. Habraken  and
W. F. van der Weg
M. J. M. Pruppers
Affiliation:
Department of Technical Physics, State University Utrecht, P.O. Box 80.000, 3508 TA Utrecht, The Netherlands
F. Zijderhand
Affiliation:
Department of Nuclear Physics, State University Utrecht, P.O. Box 80.000, 3508 TA Utrecht, The Netherlands
F. H. P. M. Habraken
Affiliation:
Department of Technical Physics, State University Utrecht, P.O. Box 80.000, 3508 TA Utrecht, The Netherlands
W. F. van der Weg
Affiliation:
Department of Technical Physics, State University Utrecht, P.O. Box 80.000, 3508 TA Utrecht, The Netherlands
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Abstract

Small concentrations of phosphorus and boron in thin films have been measured by detection of proton induced prompt γ-rays. This technique is almost free of interference from other elements in the film or the substrate. Furthermore it is possible to obtain depth information without sputtering. The detection limit of both elements is around 100 ppm; depth resolution at shallow depths in silicon is about 50 nm in the case of boron, whereas it is better than 10 nm in the case of phosphorus.

As an application of this method, the incorporation of phosphorus and boron in thin films of hydrogenated amorphous silicon is measured. The films were prepared in a glow discharge reactor by mixing PH3 or B2H6 with the SiH4/H2 gas mixture.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 48: Symposium E – Applied Materials Characterization , 1985 , 409
Copyright
Copyright © Materials Research Society 1985

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References

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