Hostname: page-component-78c5997874-4rdpn Total loading time: 0 Render date: 2024-11-17T21:22:51.214Z Has data issue: false hasContentIssue false
  • English
  • Français

Computational Investigation of Selective Movpe of AlXGa1-XAs in Presence of Hcl

Published online by Cambridge University Press:  17 March 2011

Maria Nemirovskaya ,
Carlo Cavallotti  and
Klavs Jensen
Maria Nemirovskaya
Affiliation:
Dept. Chemical Engineering, Massachusetts Institute of Technology 77 Massachusetts Ave., Cambridge, MA 02139, U.S.A
Carlo Cavallotti
Affiliation:
Dept. Chemical Engineering, Massachusetts Institute of Technology 77 Massachusetts Ave., Cambridge, MA 02139, U.S.A
Klavs Jensen
Affiliation:
Dept. Chemical Engineering, Massachusetts Institute of Technology 77 Massachusetts Ave., Cambridge, MA 02139, U.S.A
Get access

Abstract

The deposition of AlGaAs in the presence of HCl was investigated at the macroscopic and mesoscopic scales. Fluid dynamics simulations were first performed in order to study the dependence of the deposition rate on the operating conditions. Unknown gas phase and surface kinetic parameters were estimated by quantum chemistry and transition state computations. The fluxes of all species to the surface were thus computed and provided the input to a kinetic Monte Carlo model used to investigate the morphology evolution of the film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 696: Symposium N – Current Issues in Heteroepitaxial Growth--Stress Relaxation and Self Assembly , 2001 , T3.4
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Gaussian 98, Frisch, M.J.et al. Gaussian, Inc., Pittsburgh PA, 1998.Google Scholar
2. Adamson, S. D., Han, B. K., Hicks, R. F., Appl. Phys. Lett., 69, 3236 (1996)Google Scholar
3. Creighton, J. R., Appl. Surf. Sci. 82–3, 171 (1994)Google Scholar
4. Shimoyama, K., Inoue, Y., Fujii, K. and Gotoh, H., J. Cryst. Growth 124, 235 (1992)Google Scholar
5. Dorshchand, S., Daweritz, L. and Berger, H., Crystal Res. & Technol. 18, 1359 (1983)Google Scholar
6. Vvedensky, D. D., Itoh, M., Bell, G. R., Jones, T. S., and Joyce, B. A., J. Cryst. Growth 201/202, 56 (1999)Google Scholar
7. Grosse, F. and Zimmermann, R., J. Cryst. Growth 212, 128 (2000)Google Scholar
8. Venkataramani, R., Multiscale Models of MOVPE Processes, Ph.D. Thesis, MIT, 2000 Google Scholar
9. Kasu, M. and Kobayashi, N., J. Cryst. Growth 174, 513 (1997)Google Scholar
10. Taguchi, , Shiraishi, K., and Ito, T., Phys. Rev. B 60, 11509 (1999)Google Scholar