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A Comparison of Transient Annealing Methods for Silicide Formation

Published online by Cambridge University Press:  26 February 2011

R. E. Harper ,
C. J. Sofield ,
I. H. Wilson  and
K. G. Stephens
R. E. Harper
Affiliation:
Dept. of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey, UK.
C. J. Sofield
Affiliation:
UKAEA Harwell, Didcot, Oxon, UK.
I. H. Wilson
Affiliation:
Dept. of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey, UK.
K. G. Stephens
Affiliation:
Dept. of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey, UK.
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Abstract

Nickel and cobalt silicides have been formed by raster-scanned electron beam and flash-lamp irradiation of thin metal films on single crystal (100) and (111) silicon wafers. RBS and channelling measurements indicate that the NiSi2 is epitaxial and of good crystalline quality (Xmin 4% on (111)); epitaxial CoSi2 was more difficult to form and of somewhat poorer quality. The elastic recoil technique has been used to determine bulk and interfacial light element contamination. These measurements have been correlated with resistivity and SEM studies of the surface textures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 37: Symposium D – Layered Structures, Epitaxy, and Interfaces , 1984 , 573
Copyright
Copyright © Materials Research Society 1985

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References

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