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A Comparative Study of GaN Films Grown on Different Faces of Sapphire by ECR-Assisted MBE

Published online by Cambridge University Press:  25 February 2011

T. D. Moustakas ,
R. J. Molnar ,
T. Lei ,
G. Menon  and
C. R. Eddy Jr
T. D. Moustakas
Affiliation:
Molecular Beam Epitaxy Laboratory, Department of Electrical Engineering, Boston University, Boston, MA 02215.
R. J. Molnar
Affiliation:
Molecular Beam Epitaxy Laboratory, Department of Electrical Engineering, Boston University, Boston, MA 02215.
T. Lei
Affiliation:
Molecular Beam Epitaxy Laboratory, Department of Electrical Engineering, Boston University, Boston, MA 02215.
G. Menon
Affiliation:
Molecular Beam Epitaxy Laboratory, Department of Electrical Engineering, Boston University, Boston, MA 02215.
C. R. Eddy Jr
Affiliation:
Molecular Beam Epitaxy Laboratory, Department of Electrical Engineering, Boston University, Boston, MA 02215.
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Abstract

GaN films were grown on c-plane (0001), a-plane (1120) and r-plane (1102) sapphire substrates by the ECR-assisted MBE method. The films were grown using a two-step growth process, in which a GaN buffer is grown first at relatively low temperatures and the rest of the film is grown at higher temperatures. RHEED studies indicate that this growth method promotes lateral growth and leads to films with smooth surface morphology. The epitaxial relationship to the substrate, the crystalline quality and the surface morphology were investigated by RHEED, X-ray diffraction and SEM studies.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 242: Symposium G – Wide Band-Gap Semiconductors , 1992 , 427
Copyright
Copyright © Materials Research Society 1992

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References

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